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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR20KM OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 q IT (RMS) q VDRM Measurement point of case temperature ................................................................ 20A ................................................................. 600V q IFGT !, IRGT ! , IRGT # .................................... 20mA q Viso ................................................................. 2000V q UL Recognized: Yellow Card No.E80276(N) File No. E80271 T1 TERMINAL T2 TERMINAL GATE TERMINAL TO-220FN APPLICATION Vacuum cleaner, light dimmer, copying machine, other control of motor and heater MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state Non-repetitive peak off-state voltage1 voltage1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc=85C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 2.6 0.2 Ratings 20 200 167 5 0.5 10 2 -40 ~ +125 -40 ~ +125 Unit A A A 2s W W V A C C g V Mar. 2002 Typical value Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 2.0 2000 1. Gate open. MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate trigger current 2 Gate non-trigger voltage Thermal resistance Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125C, VDRM applied Tc=25C, ITM=30A, Instantaneous measurement Tj=25C, VD=6V, RL=6, RG=330 Limits Min. -- -- -- -- -- -- -- -- 0.2 -- 10 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 -- 2.0 -- Unit mA V V V V mA mA mA V C/ W V/s Gate trigger voltage 2 @ # ! @ # Tj=25C, VD=6V, RL=6, RG=330 Tj=125C, VD=1/2VDRM Junction to case 3 Critical-rate of rise off-state commutating voltage4 Tj=125C 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj=125C 2. Rate of decay of on-atate commutating current (di/dt)c=-10A/ms 3. Peak off-state voltage VD=400V Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE (di/dt)c TIME TIME VD TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 240 RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) 7 5 ON-STATE CURRENT (A) 3 2 200 160 120 80 40 0 100 102 7 5 3 2 Tj = 125C 101 7 5 3 2 Tj = 25C 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 102 7 5 3 2 100 (%) GATE CHARACTERISTICS (, AND ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 TYPICAL EXAMPLE GATE VOLTAGE (V) VGM = 10V PGM = 5W PG(AV) = 0.5W IGM = 2A IFGT I, IRGT I, IRGT III VGD = 0.2V 101 7 5 3 2 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) VGT = 1.5V 102 7 5 3 2 IFGT I 100 7 5 3 2 IRGT I IRGT III 10-1 1 10 2 3 5 7102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 2 3 5 7103 2 3 5 7 104 2 3 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10-1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE ON-STATE POWER DISSIPATION (W) 40 30 360 CONDUCTION RESISTIVE, INDUCTIVE 20 LOADS CASE TEMPERATURE (C) 15 20 25 30 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 5 10 15 10 0 0 5 10 20 25 30 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 NATURAL CONVECTION 120 160 160 t 2.3 100 100 100 t 2.3 80 60 60 t 2.3 60 40 20 0 0 5 10 15 20 25 30 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) NATURAL CONVECTION NO FINS CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 3 2 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) TYPICAL EXAMPLE TYPICAL EXAMPLE IH(typ) = 20mA 104 7 5 3 2 HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 102 7 5 4 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 103 7 5 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) Mar. 2002 LACHING CURRENT (mA) DISTRIBUTION 3 2 102 7 5 3 2 101 7 5 3 2 + T2 , G+ TYPICAL - T2 , G- EXAMPLE 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) + T2 , G- TYPICAL EXAMPLE MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT TYPICAL EXAMPLE Tj = 125C III QUADRANT COMMUTATION CHARACTERISTICS 102 7 5 3 2 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 101 7 5 3 2 TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz 100 7 3 III QUADRANT MINIMUM CHARACTERISTICS VALUE I QUADRANT 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 100 (%) 103 7 5 3 2 IFGT I TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) IRGT I IRGT III 102 7 5 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 GATE TRIGGER PULSE WIDTH (s) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 6V V A 330 6V V A 330 TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A 330 TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR20KM OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 q IT (RMS) q VDRM Measurement point of case temperature ................................................................ 20A ................................................................. 600V q IFGT !, IRGT ! , IRGT # .................................... 20mA q Viso ................................................................. 2000V q UL Recognized: Yellow Card No.E80276(N) File No. E80271 T1 TERMINAL T2 TERMINAL GATE TERMINAL TO-220FN APPLICATION Vacuum cleaner, light dimmer, copying machine, other control of motor and heater (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state Non-repetitive peak off-state voltage1 voltage1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc=110C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 2.6 0.2 Ratings 20 200 167 5 0.5 10 2 -40 ~ +150 -40 ~ +150 Unit A A A 2s W W V A C C g V Mar. 2002 Typical value Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 2.0 2000 1. Gate open. MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate trigger current 2 Gate non-trigger voltage Thermal resistance Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125C/150C, VDRM applied Tc=25C, ITM=30A, Instantaneous measurement Tj=25C, VD=6V, RL=6, RG=330 Limits Min. -- -- -- -- -- -- -- -- 0.2/0.1 -- 10/1 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0/3.0 1.5 1.5 1.5 1.5 20 20 20 -- 2.0 -- Unit mA V V V V mA mA mA V C/ W V/s Gate trigger voltage 2 @ # ! @ # Tj=25C, VD=6V, RL=6, RG=330 Tj=125C/150C, VD=1/2VDRM Junction to case 3 Critical-rate of rise off-state commutating voltage4 Tj=125C/150C 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj=125C/150C 2. Rate of decay of on-atate commutating current (di/dt)c=-10A/ms 3. Peak off-state voltage VD=400V Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE (di/dt)c TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 240 RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) 7 5 ON-STATE CURRENT (A) 3 2 200 160 120 80 40 0 100 102 7 5 3 2 Tj = 150C 101 7 5 3 2 Tj = 25C 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 3 5 7 101 2 3 5 7 102 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) GATE CHARACTERISTICS (, AND ) 5 3 2 VGM = 10V GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 TYPICAL EXAMPLE GATE VOLTAGE (V) 101 7 5 3 VGT = 1.5V 2 PG(AV) = 0.5W IGM = 2A GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) PGM = 5W 102 IFGT I 7 5 3 2 100 7 5 3 2 IFGT I, IRGT I, IRGT III IRGT I IRGT III 10-1 7 5 VGD = 0.1V 101 2 3 5 7102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 2 3 5 7103 2 3 5 7 104 2 3 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10-1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ON-STATE POWER DISSIPATION (W) 40 30 360 CONDUCTION RESISTIVE, INDUCTIVE 20 LOADS CASE TEMPERATURE (C) 15 20 25 30 140 120 100 80 60 10 0 0 5 10 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 5 10 15 20 25 30 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 NATURAL CONVECTION CURVES APPLY REGARDLESS 120 100 80 60 160 160 t 2.3 40 100 100 t 2.3 20 60 60 t 2.3 0 0 5 10 OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 RMS ON-STATE CURRENT (A) NATURAL CONVECTION NO FINS CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 15 20 25 30 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) 5 3 2 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IH(typ) = 20mA 7 5 3 2 103 7 5 3 2 HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 103 102 7 5 4 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 100 (%) 103 7 5 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) Mar. 2002 LACHING CURRENT (mA) DISTRIBUTION 3 2 102 7 5 3 2 101 7 5 3 2 + T2 , G+ TYPICAL - T2 , G- EXAMPLE 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) + T2 , G- TYPICAL EXAMPLE MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM The product guaranteed maximum junction temperature 150C (See warning.) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125C) 160 140 BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150C) 160 140 BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 100 (%) TYPICAL EXAMPLE Tj = 125C 100 (%) TYPICAL EXAMPLE Tj = 150C 120 100 80 60 40 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT III QUADRANT 120 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) III QUADRANT CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) 102 7 5 3 2 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) COMMUTATION CHARACTERISTICS (Tj = 125C) SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD COMMUTATION CHARACTERISTICS (Tj = 150C) 102 7 5 3 2 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD 101 7 5 3 2 TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz 101 7 5 3 2 I QUADRANT TYPICAL EXAMPLE Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz 100 7 3 MINIMUM III QUADRANT CHARACTERISTICS VALUE I QUADRANT 5 7 101 2 3 5 7 III QUADRANT MINIMUM CHARACTERISTICS VALUE 3 5 7 101 2 3 5 7 102 100 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 100 (%) 103 7 5 3 2 IFGT I TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) IRGT I IRGT III 102 7 5 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 GATE TRIGGER PULSE WIDTH (s) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR20KM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC LOAD 6V V A 330 6V V A 330 C1 R1 C1 = 0.1~0.47F R1 = 47~100 C0 R0 C0 = 0.1F R0 = 100 TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A 330 TEST PROCEDURE 3 Mar. 2002 |
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